p ower di is a registered trademark of diodes incorporated . dm ph4015spsq document number: ds 38127 rev. 1 - 2 1 of 7 www.diodes.com june 2016 ? diodes incorporated new product dm ph4015spsq 175c p - channel enhancement mode mosfet powerdi product summary bv dss r ds( on ) max i d t c = + 25 c - 40 v 1 0 m ? @ v gs = - 10 v - 50 a 1 4 m ? @ v gs = - 4.5 v - 40 a description and applications this mosfet is designed to meet the stringent requirements of automotive applications. it is qualified to aec - q101, s upported by a ppap and is ideal for use in : ? reverse p olarity p rotection ? bldc motor control ? power management f unctions features and benefits ? rated to +175c C ideal for high ambient temperature environments ? 100% unclamped inductive switch (uis) t est in p roduction low o n - resistance ? fast s witching s peed ? lead - free finish; rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability ? ppap c apable (note 4) mechanical data ? cas e : p ower di5060 - 8 ? case material: molded plastic, Dgreen molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections: see diagram ? terminals: finish C 100% m atte tin a nnealed over copper l eadframe . solderable per mil - std - 202, method 208 ? weight: 0.0 97 grams ( a pproximate) ordering information (note 5 ) part number case packaging dm p h 4015sps q - 13 p ower di5060 - 8 2 , 500 / tape & reel notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. a utomotive products are aec - q101 qualified and are ppap capable. refer to http://www.diodes.com/product_compliance_definitions .html . 5 . for packaging details, go to our website at http://www.di odes.com/products/packages.html . marking information top view bottom view internal schematic t op view pin configuration pin1 s d d g d d s s = manufacturers marking h4015ss = product type marking code yyww = date code marking yy = year (ex: 1 6 = 20 1 6 ) ww = week (01 to 53) s d s s g d d d h4 01 5ss yy ww d s g s d s s g d d d logo part no . year: ? 9?= 2009 xth week: 01 ~ 53 p3010ls yy ww green e3
p ower di is a registered trademark of diodes incorporated . dm ph4015spsq document number: ds 38127 rev. 1 - 2 2 of 7 www.diodes.com june 2016 ? diodes incorporated new product dm ph4015spsq maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss - 4 0 v gate - source voltage v gss 25 v continuous drain current v gs = - 10 v (note 8 ) steady state t c = +25c t c = + 100 c i d - 50 - 35 a continuous drain current v gs = - 10 v (note 7 ) steady state t a = +25c t a = + 100 c i d - 1 2.0 - 9. 0 a pulsed drain curren t ( 10 ? dm - 100 a maximum body diode continuous current (note 8 ) i s - 50 a avalanche current (note 9 ) l = 1 mh i a s - 2 2 a avalanche energy (note 9 ) l = 1 mh e a s 260 mj thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 6 ) t a = + 25c p d 1. 5 w thermal resistance, junction to ambient (note 6 ) s teady s tate r ja 9 8 c/w total power dissipation (note 7 ) t a = + 25c p d 2. 6 w thermal resistance, junction to ambient (note 7 ) s teady s tate r ja 5 7 .0 c/w thermal resistance, junction to case (note 8 ) r j c 0.9 c/w operating and storage temperature range t j, t stg - 55 to + 1 75 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 10 ) drain - source breakdown voltage bv dss - 4 0 ? ? gs = 0v, i d = - 250 a zero gate voltage drain current i dss ? ? ? ? a v ds = - 40 v, v gs = 0v gate - source leakage i gss ? ? gs = 25 v, v ds = 0v on characteristics (note 10 ) gate threshold voltage v gs( th ) - 1 .5 - 2 - 2 . 5 v v ds = v gs , i d = - 250 a static drain - source on - resistance r ds(on) ? ? ? gs = - 10 v, i d = - 9.8 a ? gs = - 4 .5v, i d = - 9.8 a diode forward voltage v sd ? gs = 0v, i s = - 1a dynamic characteristics (note 1 1 ) input capacitance c iss ? ? ds = - 20 v, v gs = 0v f = 1mhz output capacitance c oss ? ? rss ? ? g ? ? ? ? ? ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = - 4. 5 v ) q g ? ? ? ds = - 20 v, i d = - 9.8 a total gate charge ( v gs = - 10 v ) q g ? ? gs ? ? gd ? ? d( on ) ? ? gs = - 10 v, v dd = - 20v , r g = 6 ? d = - 1 a turn - on rise time t r ? ? d( off ) ? ? f ? ? ? ? rr f = - 9.8 a, di/dt = - 10 0a/ s reverse recovery charge q rr f = - 9.8 a, di/dt = - 10 0a/ s notes: 6 . device mounted on fr - 4 pc board, with minimum recommended pad layout, single sided. 7 . device mounted on fr - 4 substrate pc board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 8 . thermal re sistance from junction to soldering point (on the exposed drain pad). 9 . i as and e as rating are based on low frequency and duty cycles to keep t j = + 25 c . 10 . short duration pulse test used to minimize self - heating effect. 1 1 . guaranteed by design. not subject to product testing.
p ower di is a registered trademark of diodes incorporated . dm ph4015spsq document number: ds 38127 rev. 1 - 2 3 of 7 www.diodes.com june 2016 ? diodes incorporated new product dm ph4015spsq 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 0.4 0.8 1.2 1.6 2 i d , drain current (a) v ds , drain - source voltage (v) figure 1. typical output characteristic v gs = - 2.5v v gs = - 3.0v v gs = - 3.5v v gs = - 4.0v v gs = - 4.5v v gs = - 5v v gs = - 10v 0 4 8 12 16 20 1 1.5 2 2.5 3 3.5 4 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds = - 5.0v t a = - 55 o c t a = 25 o c t a = 85 o c t a = 125 o c t a = 150 o c t a = 175 o c 0.004 0.006 0.008 0.010 0.012 0.014 0 5 10 15 20 25 30 r ds(on) , drain - source on - resistance ( ? d , drain - source current (a) figure 3. typical on - resistance vs drain current and gate voltage v gs = - 10v v gs = - 4.5v 0 0.005 0.01 0.015 0.02 0.025 0.03 0 5 10 15 20 25 r ds(on) , drain - source on - resistance ( ? gs , gate - source voltage (v) figure 4. typical transfer characteristic i d = - 9.8a 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0 5 10 15 20 25 30 r ds(on) , drain - source on - resistance ( ? d , drain current (a) figure 5. typical on - resistance vs drain current and temperature v gs = - 4.5v t a = - 55 o c t a = 25 o c t a = 85 o c t a = 125 o c t a = 150 o c t a = 175 o c 0.6 0.8 1 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 175 r ds(on) , drain - source on - resistance (normalized ) t j , junction temperature ( gs = - 4.5v, i d = - 9.8a v gs = - 10v, i d = - 9.8a
p ower di is a registered trademark of diodes incorporated . dm ph4015spsq document number: ds 38127 rev. 1 - 2 4 of 7 www.diodes.com june 2016 ? diodes incorporated new product dm ph4015spsq 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.02 - 50 - 25 0 25 50 75 100 125 150 175 r ds(on) , drain - source on - resistance ( ? ) t j , junction temperature ( gs = - 4.5v, i d = - 9.8a v gs = - 10v, i d = - 9.8a 1 1.2 1.4 1.6 1.8 2 2.2 - 50 - 25 0 25 50 75 100 125 150 175 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d = - 1ma i d = - 250 a 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs current v gs = 0v t a = - 55 o c t a = 25 o c t a = 85 o c t a = 125 o c t a = 150 o c t a = 175 o c 100 1000 10000 0 5 10 15 20 25 30 35 40 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 10. typical junction capacitance f = 1mhz c iss c oss c rss 0 2 4 6 8 10 0 20 40 60 80 100 120 v gs (v) q g (nc) figure 11. gate charge v ds = - 20v, i d = - 9.8a 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 12. soa, safe operation area t j (max) = 1 75 a = 25 gs = - 10v r ds(on) limited dc p w = 100s p w = 10s p w = 1s p w = 100ms p w = 10ms p w = 1ms
p ower di is a registered trademark of diodes incorporated . dm ph4015spsq document number: ds 38127 rev. 1 - 2 5 of 7 www.diodes.com june 2016 ? diodes incorporated new product dm ph4015spsq 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 13. transient thermal resistance r ja (t) = r(t) * r ja r ja = 98
p ower di is a registered trademark of diodes incorporated . dm ph4015spsq document number: ds 38127 rev. 1 - 2 6 of 7 www.diodes.com june 2016 ? diodes incorporated new product dm ph4015spsq package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. powerdi5060 - 8 suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. powerdi5060 - 8 powerdi5060 - 8 dim min max typ a 0.90 1.10 1.00 a1 0.00 0.05 ? b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 d 5.15 bsc d1 4.70 5.10 4.90 d2 3.70 4.10 3.90 d3 3.90 4.30 4.10 e 6.15 bsc e1 5.60 6.00 5.80 e2 3.28 3.68 3.48 e3 3.99 4.39 4.19 e 1.27 bsc g 0.51 0.71 0.61 k 0.51 ? ? ? ? l 0.51 0.71 0.61 l1 0.100 0.200 0.175 m 3.235 4.035 3.635 m1 1.00 1.40 1.21 10o 12o 11o 1 6o 8o 7o all dimensions in mm dimensions value (in mm) c 1.270 g 0.660 g1 0.820 x 0.610 x1 4.100 x2 0.755 x3 4.420 x4 5.610 y 1.270 y1 0.600 y2 1.020 y3 0.295 y4 1.825 y5 3.810 y6 0.180 y7 6.610 y7 x3 y2 y5 x1 g1 x c y(4x) g x2 y3 y4 y6 x4 y1 d1 e1 a l k m l1 d2 g e2 detail a 0(4x) a1 c e d e 1 detail a b (8x) e/2 1 01 (4x) m1 b2 (4x) b3 (4x) e3 d3
p ower di is a registered trademark of diodes incorporated . dm ph4015spsq document number: ds 38127 rev. 1 - 2 7 of 7 www.diodes.com june 2016 ? diodes incorporated new product dm ph4015spsq important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this doc ument is written in english but may be translated into multiple languages for reference. only the english version of this do cument is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or s ystems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in signific ant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. cu stomers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requiremen ts concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 6 , diodes incorporated www.diodes.com
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